Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...
Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...
SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...
It can deliver up to 600 mA of output current and is claimed to offer the industry’s lowest operating quiescent current (Iq) of 220 μA, making it suitable for wearable consumer applications like ...
UK-based distributor Farnell is now stocking the new MicroBRICK regulator module from Vishay Intertechnology, expanding its ...
Renesas Electronics has introduced new 100V high-power N-Channel MOSFETs that are said to deliver industry-leading ...
Power Electronics Worldâ„¢ is an Angel Business Communications publication.
Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...
The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...