Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...
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