Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...

Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...